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A new method for junctionless transistors parameters extraction

Published on 29 March 2018
A new method for junctionless transistors parameters extraction
Description
 
Date 
Authors
Trevisoli R., Doria R.T., De Souza M., Pavanello M.A., Barraud S.
Year2017-0468
Source-TitleEuropean Solid-State Device Research Conference
Affiliations
Electrical Engineering Department, Centro Universitário, Sao Bernardo, Brazil, CEA, LETI, University Grenoble Alpes, Grenoble, France
Abstract
This work proposes a new method for the extraction of the flatband voltage, effective nanowire width and doping concentration of junctionless nanowire transistors. The accurate extraction of such parameters is essential for the understating of the device behavior and for the prediction of its performance in circuits through analytical models. The method is validated using 3D numerical simulations and has been applied to experimental short-channel devices proving its applicability. © 2017 IEEE.
Author-Keywords
Effective Width, Extraction Method, Nanowires
Index-Keywords
Extraction, Nanowires, Solid state devices, 3-D numerical simulation, Doping concentration, Effective width, Extraction method, Junctionless transistors, Nanowire transistors, Parameters extraction, Short-channel devices, Numerical methods
ISSN19308876
LinkLink

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