A high temperature, 12-bit-time-domain sensor interface based on injection locked oscillator
| Description | |
| Date | |
| Authors | Chabchoub E., Badets F., Nouet P., Masmoudi M., Mailly F. |
| Year | 2017-0452 |
| Source-Title | Proceedings - IEEE International Symposium on Circuits and Systems |
| Affiliations | CEA-LETI, Grenoble, France, University of Montpellier, LIRMM, France, METS Research Group-National Engineers School of Sfax, Sfax University, Tunisia |
| Abstract | A novel resistive sensor interface for high temperature applications is presented. It is based on a time domain architecture using Injection Locked Oscillators as phase shifters that results in higher temperature hardness and simpler circuits. The system depends on the relative accuracy instead of its absolute properties and doesn't suffer from temperature variations. The proposed circuit is designed using 0.18 ?m partially depleted silicon on insulator technology. Simulations have shown a maximum variation of the output lower than ±0.5%, over a temperature ranging from -40°C to 250°C. © 2017 IEEE. |
| Author-Keywords | harsh environment, high temperature, injection locked oscillator, phase shifter, sensor interface, time domain architecture |
| Index-Keywords | High temperature applications, Oscillators (electronic), Oscillistors, Phase shifters, Harsh environment, High temperature, Injection locked oscillators, Sensor interface, Time domain, Silicon on insulator technology |
| ISSN | 2714310 |
| Link | Link |