You are here : Home > In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy
Manage PermissionsManage Permissions

Publications

In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy

Published on 29 March 2018
In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy
Description
 
Date 
Authors
Berthier R., Bernier N., Cooper D., Sabbione C., Hippert F., Noé P.
Year2017-0450
Source-TitleJournal of Applied Physics
Affiliations
Université Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble Cedex 9, France, LNCMI (CNRS, Université Grenoble Alpes, UPS, INSA), Grenoble Cedex 9, France
Abstract
The crystallization mechanisms of prototypical GeTe phase-change material thin films have been investigated by in situ scanning transmission electron microscopy annealing experiments. A novel sample preparation method has been developed to improve sample quality and stability during in situ annealing, enabling quantitative analysis and live recording of phase change events. Results show that for an uncapped 100 nm thick GeTe layer, exposure to air after fabrication leads to composition changes which promote heterogeneous nucleation at the oxidized surface. We also demonstrate that protecting the GeTe layer with a 10 nm SiN capping layer prevents nucleation at the surface and allows volume nucleation at a temperature 50 °C higher than the onset of crystallization in the oxidized sample. Our results have important implications regarding the integration of these materials in confined memory cells. © 2017 Author(s).
Author-Keywords
 
Index-Keywords
Electron microscopy, High resolution transmission electron microscopy, Nucleation, Oxidation, Phase change materials, Silicon nitride, Thin films, Transmission electron microscopy, Annealing experiments, Composition changes, Crystallization mechanisms, Heterogeneous nucleation, In-situ observations, Phase change thin films, Sample preparation methods, Scanning transmission electron microscopy, Scanning electron microscopy
ISSN218979
LinkLink

Retour à la liste