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New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling

Published on 29 March 2018
New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling
Description
 
Date 
Authors
Garros X., Laurent A., Barraud S., Lacord J., Faynot O., Ghibaudo G., Reimbold G.
Year2017-0374
Source-TitleDigest of Technical Papers - Symposium on VLSI Technology
Affiliations
CEA-LETI, 17 rue des Martyrs, Grenoble, France, IMEP-LAHC, Minatec, INPG, Grenoble, France
Abstract
In this paper we deeply investigate the dependence of BTI with transistor scaling. Unlike PBTI, NBTI is strongly enhanced in narrow devices like Nanowire or Finfet. We clearly prove by means of 3D electrostatic simulations that it is due to a defect density at the Sidewall (SW) of the transistor about 2.5 times higher than the one at the Top Surface (TS). © 2017 JSAP.
Author-Keywords
 
Index-Keywords
Defect density, Surface defects, 3D technology, Electrostatic simulations, Top surface, Transistor scaling, VLSI circuits
ISSN7431562
LinkLink

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