A fully-integrated SOI CMOS complex-impedance detector for matching network tuning in LTE power amplifier
| Description | |
| Date | |
| Authors | Nicolas D., Serhan A., Giry A., Parra T., Mercier E. |
| Year | 2017-0341 |
| Source-Title | Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium |
| Affiliations | CEA, LETI, MINATEC Campus, Grenoble, France, CNRS, LAAS, Univ. Toulouse, UPS, Toulouse, France |
| Abstract | This paper describes a wide dynamic-range and accurate complex-impedance detector for adaptive power amplifier load tuning systems. The detector IC, fabricated in a 130 nm SOI technology, consumes 7mA under 2.5V supply voltage. It can handle LTE signals with an input power from 0 dBm up to 40 dBm thanks to its variable attenuator system. System level measurements show that the detector has a very good accuracy in sensing the mismatched load impedance value in the VSWR region from 2:1 to 6:1. © 2017 IEEE. |
| Author-Keywords | adaptive, impedance detector, LTE, mismatch, power amplifier, SOI, VSWR tuning |
| Index-Keywords | CMOS integrated circuits, Complex networks, Power amplifiers, Radio waves, Wireless telecommunication systems, adaptive, Complex impedance, Fully integrated, Impedance detectors, Matching networks, mismatch, Variable attenuators, Wide dynamic range, Tuning |
| ISSN | 15292517 |
| Link | Link |