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RF-pFET in fully depleted SOI demonstrates 420 GHz FT

Published on 29 March 2018
RF-pFET in fully depleted SOI demonstrates 420 GHz FT
Watts J., Sundaram K., Chew K.W.J., Lehmann S., Ong S.N., Chow W.H., Chan L.H., Mazurier J., Schwan C., Andee Y., Feudel T., Pirro L., Erben E., Nowak E., Smith E., Bazizi E.M., Kammler T., Taylor R., III, Rice B., Harame D.
Source-TitleDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
GLOBALFOUNDRIES, United States, GLOBALFOUNDRIES, Singapore, Singapore, GLOBALFOUNDRIES, Germany, CEA-LETI Minatec, France
We report an experimental pFET with 420GHz fT, which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET channel formed by SiGe condensation. This outstanding performance is achieved by a combination of layout and process optimization which minimizes capacitance and maximizes compressive strain on the channel. The technology features a high-k metal gate and short gate length (20nm drawn) in addition to the SiGe channel for high mobility. © 2017 IEEE.
CMOS, cSiGe, High-K metal gate, RF, SOI
CMOS integrated circuits, Optimization, Radio waves, Si-Ge alloys, Silicon alloys, Compressive strain, cSiGe, Fully depleted silicon-on-insulator, Fully depleted SOI, Gate length, High mobility, HIGH-K metal gates, SiGe channels, Silicon on insulator technology

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