A microsecond time resolved current collapse test setup dedicated to GaN-based Schottky diode characterization
| Description | |
| Date | |
| Authors | Lorin T., Van Den Daele W., Gillot C., Charles M., Biscarrat J., Plissonnier M., Ghibaudo G., Reimbold G. |
| Year | 2017-0292 |
| Source-Title | IEEE International Conference on Microelectronic Test Structures |
| Affiliations | CEA, LETI, MINATEC Campus, Grenoble, France, IMEP-LAHC, Université Grenoble Alpes, Minatec/INPG, Grenoble, France |
| Abstract | This paper presents a test setup to characterize current collapse effects in power diodes such as GaN-based Schottky junctions. The setup principle and its main parts are described. Current/voltage transients can be recorded very shortly (2 microseconds on wafer prober) after reverse to forward switching. The related trapping effects are analyzed through temperature dependent measurements. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | Electric current measurement, Microelectronics, Schottky barrier diodes, Current collapse, GaN based, Schottky diodes, Schottky junctions, Temperature-dependent measurements, Test setups, Time-resolved, Trapping effects, Gallium nitride |
| ISSN | |
| Link | Link |