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Effect of passivation annealing on the electromigration properties of hybrid bonding stack

Published on 29 March 2018
Effect of passivation annealing on the electromigration properties of hybrid bonding stack
Description
 
Date 
Authors
Jourdon J., Moreau S., Bouchu D., Lhostis S., Bresson N., Guiheux D., Beneyton R., Renard S., Fremont H.
Year2017-0254
Source-TitleIEEE International Reliability Physics Symposium Proceedings
Affiliations
STMicroelectronics, 850 rue Jean Monnet, Crolles Cedex, France, University of Bordeaux-IMS Laboratory, Bat A31-351 cours de la Libération, Talence, France, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, Grenoble Cedex 9, France
Abstract
This paper presents electromigration results on a hybrid bonding-based test vehicle to study the impact of bonding and passivation annealings on backend of line robustness. Black's parameters extraction leads to typical values of Cu-based interconnects. Electromigration lifetime remains the same whatever the bonding annealing conditions but a significant influence of passivation annealing is observed. Chemical analyses evidence the effect of the annealing atmosphere. A discussion is lead on the chemical species concentration at different locations of the stack and the reduction of the Time to Failure with passivation final annealing. © 2017 IEEE.
Author-Keywords
3D BSI stacked, 3D integration, deuterium, electromigration, Hybrid bonding, passivation annealing, reliability, SIMS
Index-Keywords
Annealing, Chemical analysis, Deuterium, Electromigration, Passivation, Reliability, Secondary ion mass spectrometry, 3-D integration, 3D BSI stacked, Annealing atmospheres, Annealing condition, Back end of lines, Chemical species concentrations, Hybrid bonding, Parameters extraction, Chemical bonds
ISSN15417026
LinkLink

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