A G band frequency quadrupler in 55 nm BiCMOS for bist applications
| Description | |
| Date | |
| Authors | Aouimeur W., Lauga-Larroze E., Arnould J.-D., Moron-Guerra J., Gaquière C., Lepilliet S., Quemerais T., Gloria D., Serhan A. |
| Year | 2017-0229 |
| Source-Title | Proceedings of the 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2017 |
| Affiliations | Univ. Grenoble Alpes, IMEP-LAHC, Grenoble, France, ASYGN, Montbonnot-Saint-Martin, France, IEMN, Univ. des Sciences et Technologies de Lille 1, Villeneuve d'Ascq, France, STMicroelectronics, Crolles and Grenoble, France, CEA-Leti, Grenoble, France |
| Abstract | In this paper, a frequency quadrupler based on a single ended frequency doubler, a new Marchand Balun with Coupled Slow-wave Coplanar Wave (CS-CPW) lines and a balanced frequency doubler in G band is presented and analyzed for in-situ characterization applications. The experimental results of the frequency quadrupler exhibit at 180 GHz a peak output power of -4.5 dBm associate with a linear conversion gain of -5.5 dB, a frequency bandwidth of 160 to 190 GHz and a DC power consumption of 39 mW. This quadrupler has been fabricated in the 55 nm SiGe BiCMOS technology from STMicroelectronics, the chip area is 1850×780 ?m2 including the pads. © 2017 IEEE. |
| Author-Keywords | 55nm SiGe BiCMOS, Balanced, CS-CPW, Frequency doubler, G band, Marchand balun, Quadrupler, Single ended |
| Index-Keywords | Frequency doublers, Microwave circuits, Millimeter waves, Semiconducting silicon, Silicon alloys, Balanced, G band, Marchand balun, Quadrupler, SiGe BICMOS, Single-ended, BiCMOS technology |
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| Link | Link |