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Design and operation of CMOS-compatible electron pumps fabricated with optical lithography

Published on 29 March 2018
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
Description
 
Date 
Authors
Clapera P., Klochan J., Lavieville R., Barraud S., Hutin L., Sanquer M., Vinet M., Cinins A., Barinovs G., Kashcheyevs V., Jehl X.
Year2017-0195
Source-TitleIEEE Electron Device Letters
Affiliations
Université Grenoble Alpes, INAC-PHELIQS, Grenoble, France, Université-Grenoble Alpes, LETI-DCOS, Grenoble, France, Faculty of Physics and Mathematics, University of Latvia, Riga, Latvia
Abstract
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is demonstrated in the non-adiabatic pumping regime, with a pumping frequency up to 300MHz. We also identify and model signatures of charge traps affecting charge pumping in the adiabatic regime. The availability of quantized current references in a process close to the 28FDSOI technology could trigger new applications for these pumps and allow to cointegrate them with cryogenic CMOS circuits, for instance in the emerging field of interfaces with quantum bits. © 1980-2012 IEEE.
Author-Keywords
Current control, Quantization, Quantum dots, Quantum effect semiconductor devices
Index-Keywords
Capacitance, CMOS integrated circuits, Cryogenics, Electric current control, Electron beam lithography, Fabrication, Lithography, Nanowires, Photolithography, Quantum electronics, Quantum theory, Semiconducting silicon, Semiconductor devices, Semiconductor quantum dots, Silicides, Silicon wafers, Cryogenic temperatures, Design and operations, e-Beam lithography, New applications, Pumping frequency, Quantization, Quantized current, Quantum effect semiconductor devices, Integrated circuit design
ISSN7413106
LinkLink

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