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InP based engineered substrates for photonics and RF applications

Published on 29 March 2018
InP based engineered substrates for photonics and RF applications
Description
 
Date 
Authors
Guiot E., Drouin A., Charles-Alfred C., Ledoux O., Martinez M., Cadieux C.
Year2017-0059
Source-TitleCS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology
Affiliations
SOITEC S.A., Parc Technologique des Fontaines, Bernin, France, Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, Minatec Campus, Grenoble Cedex 9, France
Abstract
The use of Smart Cut™ technology enables the layer transfer of below 1?m thick InP films. Different receiver substrates such as GaAs, Ge, Sapphire or even Si have been evaluated to enable new functions: receiver lift off, lower fragility, better integration. We have demonstrated first InP-on-GaAs (both materials being semiconducting) with a direct bonding and a density of threading dislocations below 1e5/cm2. A multi quantum wells structure has been successfully grown on top. Second, we have demonstrated InP-on-GaAs (both materials being semiconducting) with either direct or insulating bonding.
Author-Keywords
Engineered substrate, InP, Opto electronics, Recycling, RF
Index-Keywords
Gallium arsenide, Germanium, Manufacture, Recycling, Sapphire, Semiconducting gallium, Semiconductor device manufacture, Semiconductor quantum wells, Direct bonding, Engineered-substrate, Layer transfer, Lift offs, Multi quantum wells, New functions, RF applications, Threading dislocation, Substrates
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