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Tuning direct bandgap GeSn/Ge quantum dots’ interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

Published on 1 October 2018
Tuning direct bandgap GeSn/Ge quantum dots’ interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices
Description
 
Date 
Authors
Baira M., Salem B., Madhar N.A., Ilahi B.
Year2018-0076
Source-TitleSuperlattices and Microstructures
Affiliations
Faculty of Sciences, Micro-Optoelectronic and Nanostructures Laboratory, University of Monastir, Monastir, Tunisia, Univ. de Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM, Grenoble, France, Department of Physics and Astronomy, College of Sciences, King Saud University, Riyadh, Saudi Arabia
Abstract
In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in ?-and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in ?-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions. © 2018 Elsevier Ltd
Author-Keywords
 
Index-Keywords
CMOS integrated circuits, Energy gap, Landforms, Nanocrystals, Optical devices, Semiconductor quantum wells, Tin alloys, CMOS Compatible, Emission wavelength, Group-IV, Heavy holes, High efficient, Interband, IR wavelengths, L-valley, Semiconductor quantum dots
ISSN7496036
LinkLink

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