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Scanning microwave microscopy applied to semiconducting GaAs structures

Published on 1 October 2018
Scanning microwave microscopy applied to semiconducting GaAs structures
Buchter A., Hoffmann J., Delvallée A., Brinciotti E., Hapiuk D., Licitra C., Louarn K., Arnoult A., Almuneau G., Piquemal F., Zeier M., Kienberger F.
Source-TitleReview of Scientific Instruments
Federal Institute of Metrology METAS, Lindenweg 50, Bern-Wabern, Switzerland, LNE, 29 Avenue Roger Hennequin, Trappes, France, Keysight Laboratories, Keysight Technologies, Inc., Gruberstrasse 40, Linz, Austria, Université Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, LAAS-CNRS, Université de Toulouse, CNRS, UPS, Toulouse, France
A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers. © 2018 Author(s).
Calibration, Doping (additives), Electric network analyzers, Gallium arsenide, Mass spectrometry, Secondary ion mass spectrometry, Semiconducting gallium, Semiconductor junctions, Calibration algorithm, Frequency independent, P-n junction, Scanning microwave microscopes, Scanning microwave microscopies, Tuning forks, Vector network analyzers, Wide frequency range, Gallium compounds

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