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Growth of Ge1?xSnx Nanowires by Chemical Vapor Deposition via Vapor–Liquid–Solid Mechanism Using GeH4 and SnCl4

Published on 1 October 2018
Growth of Ge1?xSnx Nanowires by Chemical Vapor Deposition via Vapor–Liquid–Solid Mechanism Using GeH4 and SnCl4
Description
 
Date 
Authors
Haffner T., Zeghouane M., Bassani F., Gentile P., Gassenq A., Chouchane F., Pauc N., Martinez E., Robin E., David S., Baron T., Salem B.
Year2018-0026
Source-TitlePhysica Status Solidi (A) Applications and Materials Science
Affiliations
Univ. Grenoble Alpes CNRS, LTM, Grenoble, France, Univ. Grenoble Alpes CEA, INAC-Pheliqs, Grenoble, France, Univ. Grenoble Alpes CEA, LETI-DTSI, Grenoble, France, Dr. E. Robin, Univ. Grenoble Alpes CEA, INAC-MEM, Grenoble, France
Abstract
In this work we report on the elaboration and characterization of Ge1?xSnx nanowires synthetized by chemical vapor deposition (CVD) via vapor–liquid–solid (VLS) mechanism using GeH4 and SnCl4 as precursors. We have investigated tin incorporation in Ge as a function of experimental growth conditions such as growth temperature and Sn precursor partial pressure (PSnCl4/PGeH4 ratio). We have demonstrated Ge1?xSnx nanowires with Sn incorporation around 1 at.% in the core with a thin Sn-rich shell with up to 10 at.% Sn well beyond the equilibrium solubility of Sn in bulk Ge. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Author-Keywords
chemical vapor deposition, GeSn nanowires, group IV semiconductors, structural characterization, vapor–liquid–solid (VLS) mechanism
Index-Keywords
Chlorine compounds, Deposition, Germanium, Germanium compounds, Liquids, Nanowires, Tin, Tin compounds, Vapor deposition, Chemical vapor depositions (CVD), Equilibrium solubilities, Group-IV semiconductors, Growth conditions, Precursor partial pressure, Structural characterization, Tin incorporation, Vapor-liquid-solid mechanism, Chemical vapor deposition
ISSN18626300
LinkLink

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