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Direct measurement of AC electrokinetics properties and capture frequencies of silicon and silicon-germanium nanowires

Published on 1 October 2018
Direct measurement of AC electrokinetics properties and capture frequencies of silicon and silicon-germanium nanowires
Description
 
Date 
Authors
Merhej M., Honegger T., Bassani F., Baron T., Peyrade D., Drouin D., Salem B.
Year2018-0023
Source-TitleSemiconductor Science and Technology
Affiliations
Univ. Grenoble Alpes, CNRS, CEA/Leti Minatec, LTM, Grenoble, France, Laboratoire Nanotechnologies Nanosystemes (LN2), CNRS UMI-3463, Université de Sherbrooke, 3000 Boul. Université, Sherbrooke, Qc, Canada, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boul. Université, Sherbrooke, Qc, Canada
Abstract
The assembly of semiconductor nanowires with nanoscale precision is crucial for their integration into functional systems. In this work, we propose a novel method to experimentally determine the real part of the Clausius-Mossotti factor (CMF) of silicon and silicon-germanium nanowires. The quantification of this CMF is measured with the nanowires velocities in a pure dielectrophoretic regime. This approach combined with a study on the connected nanowires alignment yield has led to a frequency of capture evaluation. In addition, we have also presented the morphology of nanowires assembly using dielectrophoresis for a wide frequency variation of AC electric fields. © 2017 IOP Publishing Ltd.
Author-Keywords
AC electrokinetics, Clausius-Mossotti factor, nanowires
Index-Keywords
Electric fields, Electrodynamics, Electrohydrodynamics, Electromagnetic fields, Electroosmosis, Electrophoresis, Germanium, Silicon, Ac electrokinetics, Clausius-mossotti factor, Dielectrophoretic, Direct measurement, Frequency variation, Functional systems, Nanoscale precision, Semiconductor nanowire, Nanowires
ISSN2681242
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