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Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays

Published on 1 October 2018
Cell-to-Cell Fundamental Variability Limits Investigation in OxRRAM Arrays
Description
 
Date 
Authors
Grossi A., Zambelli C., Olivo P., Nowak E., Molas G., Nodin J.F., Perniola L.
Year2018-0015
Source-TitleIEEE Electron Device Letters
Affiliations
Dipartimento di Ingegneria, Università Degli Studi di Ferrara, Ferrara, Italy, CEA-Leti, Minatec Campus, Grenoble, France
Abstract
In this letter, the fundamental variability limits of filament-based OxRRAM are investigated considering different transistor sizes and metal-insulator-metal (MIM) stacks featuring different materials and thicknesses. Cell-to-cell variability is analyzed through an extensive characterization of Forming, Set, and Reset operations on 4-kb OxRRAM arrays. The results obtained in terms of switching voltage variability and resistance variability from cell-to-cell are compared and discussed to identify the variability limiting component as a function of the conduction regime and to understand the impact of transistor MIM stack parameters on variability and performances. © 2017 IEEE.
Author-Keywords
HfO, OxRRAM, QPC model, variability
Index-Keywords
Computer architecture, Cytology, Electric insulators, Electric resistance, Hafnium oxides, Microprocessor chips, Switches, Transistors, Voltage measurement, Cell-to-cell variability, Conduction regime, HfO2, OxRRAM, Switching voltages, Transistor size, variability, Cells
ISSN7413106
LinkLink

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