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Atmospheric pressure selective epitaxial growth of heavily in situ phosphorous-doped Si(:C) raised sources and drains

Published on 29 March 2018
Atmospheric pressure selective epitaxial growth of heavily in situ phosphorous-doped Si(:C) raised sources and drains
Description
 
Date 
Authors
Hartmann J.M., Aubin J., Barraud S., Samson M.P.
Year2017-0055
Source-TitleECS Journal of Solid State Science and Technology
Affiliations
University Grenoble Alpes, Grenoble, France, CEA, LETI, Minatec Campus, Grenoble, France, ST Microelectronics, Crolles, France
Abstract
We have developed an innovative atmospheric pressure process for the selective co-flow deposition of Si(C):P Raised Sources and Drains (RSDs) at 700°C-800°C. Layers of Si:P were grown with SiH2Cl2, HCl and a PH3 1% in H2 bottle (with no dependence on growth temperature) resulting in a Si:P growth rate that increased as the PH3 mass-flow increased, together with a P+ ion concentration that reached 7 × 1019 cm-3. For even higher phosphine flows, we have switched to PH3 5% in H2 bottles and studied the growth kinetics and n-type doping of Si at 700°C. The Si:P growth rate increased, stabilized then decreased (which is most likely due to surface poisoning) as the PH3 mass-flow increased. This was associated with a sharp increase then a stabilization at nearly 1020 cm-3 of the P+ ion concentration. The resulting Si:P layers were single crystalline and slightly rough. Full selectivity versus SiO2 (isolation) and SiN sidewall spacers was achieved on patterned wafers with this heavily chlorinated chemistry. Finally, we have evaluated the feasibility of adding SiCH6 to the gaseous mixture to obtain SiC:P layers. The substitutional C concentration was rather small (at most 0.55%). Meanwhile, the resistivity was at first stable then increased, while the SiC:P growth rate monotonously decreased as the SiCH6 mass-flow went up. © 2016 The Electrochemical Society. All rights reserved.
Author-Keywords
Atmospheric pressure - chemical vapour deposition, Growth kinetics, In-situ doping, Selectivity, Si(C):P raised sources and drains, Structural properties
Index-Keywords
Atmospheric chemistry, Atmospheric pressure, Bottles, Catalyst selectivity, Chemical vapor deposition, Deposition, Growth rate, Mass transfer, pH, Phosphorus compounds, Semiconductor doping, Silicon, Silicon carbide, Silicon nitride, Silicon wafers, Structural properties, Vapor deposition, Chemical vapour deposition, Gaseous mixture, In-situ doping, Ion concentrations, Patterned wafers, Selective epitaxial growth, Single-crystalline, Surface poisoning, Growth kinetics
ISSN21628769
LinkLink

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