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                  Starting date : Dec 2015 > Nov 2019
Lifetime: 48 months
               
 
                 
               Program in support : 
 H2020-ICT-27-2015 “Photonics KET
 
                 
 
                
                  Status of project : complete
 
                
                
                  CEA-Leti's contact :                             
> Ségolène Olivier
 > Laurent Fulbert                                        
                 
 
               Project Coordinator: CEA-Leti 
                
                  Partners:  
 CH: Vario-OpticsFR: Ayming, STmicroelectronics
University Paris-Sud
GB: Cork Institute of Technology
Seagate (until April 2018)
University St-Andrews
Univiversity Southampton
GE: Finisar
IT: STmicroelectronics, University Pavia
  
 
 
                 
 
                
                  Investment: € 4 mi
                
                  EC Contribution: € 3.7 mi
 
                 
 
               Releases 
 | Stakes 
                
                  
 CEA-Leti is contributing to the COSMICC project by developing novel devices and integrated optical transceiver circuits capable of meeting the requirements of datacenter optical communication links based on Coarse Wavelength Division Multiplexing (CWDM).
 
 The Institute has successfully completed technological developments to upgrade its 200 mm R&D Silicon Photonics platform with the introduction of a new SiN guiding layer integrated above the Si layer along with an intermediate SiO2 spacing layer. SiN material combines several benefits: 
 it is transparent across a broad range of wavelengths due to a refractive index lower than silicon (1.88 at 1310 nm wavelength),  it is less prone to fabrication defects thus reducing propagation lossesits refractive index is, by an order of magnitude, less sensitive to temperature than that of silicon, which makes it particularly attractive for building low-loss athermal devices.
 
 CEA-Leti has developed a low temperature (300 °C)-deposited SiNx material to reduce mechanical stresses and ensure compatibility with doped active components such as high-speed modulators and photodetectors in the underlying Si guiding layer. Propagation losses of monomode SiN waveguides are as low as 0.8 dB/cm compared with 3.5 dB/cm for their Si counterparts. In addition, the transition between Si and SiN layers has been optimized to ensure losses of less than 0.1 dB.
 
 This additional low-loss SiN layer has enabled CEA-Leti to develop several key components for CWDM (Coarse Wavelength Division Multiplexing) optical transceivers including a 4-wavelength athermal (de)multiplexer (1271, 1291, 1311 and 1331 nm) and a broadband hybrid SiN/Si fiber grating coupler over 80 nm. 
CEA-Leti is also designing and integrating hybrid III-V lasers on the SiN-enhanced silicon photonics platform to manufacture fully integrated, uncooled, high-speed silicon photonics transceivers operating at 100 Gb/s per fiber. 
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 CEA-Leti has developed a state-of-the-art library of Si and SiN photonic devices that can be used to build photonic integrated circuits for Datacom applications. These developments have prompted creation of start-up SCINTIL Photonics and diversification towards new applications in LIDAR for automotive, High-Performance Computing (HPC) and quantum cryptography.
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