Join us during the 69th edition of International Electron Devices Meeting!
CEA-Leti Will Present Gains in Ultimate 3D, RF & Power, and
Quantum & Neuromorphic Computing with Emerging Devices
IEEE International Electron Devices Meeting (IEDM) is the world's preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling.
The institute will present nine papers during the conference this year. Two presentations will highlight a breakthrough in 3D sequential integration and results pushing GaN/Si HEMT closer to GaN/SiC performance at 28 GHz:
“3D Sequential Integration with Si CMOS Stacked on 28nm Industrial FDSOI with Cu-ULK iBEOL Featuring RO and HDR Pixel”, reports the world-first 3D sequential integration of CMOS over CMOS with advanced metal line levels, which brings 3DSI with intermediate BEOL closer to commercialization.
"6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts" reports development of CMOS compatible 200mm SiN/AlN/GaN MIS-HEMT on silicon substrate that brings GaN/Si high electron mobility transistors (HEMT) closer to GaN/SiC performance at 28 GHz in power density. It also highlights that SiN/AlN/GaN on silicon metal-insulated semiconductor (MIS-HEMT) is a potential candidate for high power Ka-band power amplifiers. .
Be part of the discussion and find below CEA-Leti’s interventions at IEDM 2023!
Session 19.5: Tuesday, Dec. 12 @ 4:00 pm (Grand Ballroom A)
| Collaborative research paper between CEA-Leti and Soitec
| Ultimate Layer Stacking Technology for High Density Sequential 3D Integration
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| Session 29.3: Wednesday, Dec. 13 @ 9:55 am (Grand Ballroom B)
| Tadeu Mota Frutuoso
| 3D sequential
integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL
featuring RO and HDR pixel
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Radio Frequency
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Session 34.2: Wednesday, Dec. 13 @ 9:30 am (Continental 7-9)
| Xavier Barros
| A cost effective RF-SOI Drain Extended MOS transistor featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier application
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Session 34.3: Wednesday, Dec. 13 @ 9:55 am (Continental 7-9)
| Quentin Berlingard
| RF performance enhancement of 28nm FD-SOI transistors down to cryogenic temperature using back biasing
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Session 38.3: Wednesday, Dec. 13 @ 2:25 pm (Continental 4)
| Erwan Morvan
| 6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts
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Emerging Device and Compute Technology (EDT)
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Session 22.3: Tuesday, Dec. 12
@ 3:10 (Continental 5)
| Kamal Danouchi
| Designing Networks of Resistively-Coupled Stochastic Magnetic Tunnel Junctions for Energy-Based Optimum Search
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Neuromoprhic computing
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papers Session 23:3: Tuesday, Dec. 12
@ 3:10 (Continental 6)
| Michele Martemucci (CEA-List)
| Hybrid FeRAM/RRAM Synaptic Circuit Enabling On-Chip Inference and Learning at the Edge
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Session 12:3: Tuesday, Dec. 12
@ 9:55 am (Continental 1-3)
| Work in collaboration between Damien Querlioz and Elisa Vianello (CEA-Leti)
| Bayesian In-Memory Computing with Resistive Memories
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Quantum Technology
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LETI DEVICES WORKSHOP
December 10th at 5:30pm, meet our experts during the Leti Devices Workshop and discover highly innovative technologies towards efficiency & sustainability.
📍 Nikko Hotel, 222 Mason Street, third floor