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IRPS - International Reliability Physics Symposium

From 3/22/2026 to 3/26/2026
Tucson, Arizona, USA.

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CEA Leti to Showcase Integrated Expertise In Microelectronics Reliability at IRPS 2026

At IRPS 2026, the premier forum for new and original research in microelectronics reliability, CEA Leti will present seven papers that reflect a broad and integrated expertise across device physics, process integration, RF technologies, FD SOI, GaN, BEOL reliability, and low temperature platforms enabling 3D sequential integration. Institute research engineers also contributed to two other projects whose work will be presented.
The papers demonstrate the institute’s ability to combine innovative characterization methods with physics based modelling, delivering early stage reliability insights that guide both technology developers and circuit designers toward robust, industrial grade solutions.

“These presentations reflect CEA-Leti’s depth in microelectronic reliability—from low-temperature integration and advanced materials analysis to physics-based modeling and design-level mitigation,” said Olivier Faynot, director of CEA-Leti's Silicon Components Department and IEEE Fellow. “By deepening understanding of key degradation mechanisms and circuit-level constraints, our teams provide practical insight that accelerates the industrial readiness of GaN, FD-SOI, and 3D sequential technologies.” 

DISCOVER CEA-LETI’S MAJOR SCIENTIFIC RESULTS AT IRPS

Seven Papers Present Early Stage Insights to Guide Technology Developers And Circuit Desig​​ners Toward Robust, Industrial Grade Solutions​ : ​

  • Radio Frequency
  • 3D Sequential Integration & Low Temperature Technologies
  • FD-SOI


Radio Frequency [Alexis Divay ​/ RF/mmW/5G session​​​]

Thursday, 26 March 2026
1:35-2:00 PM
​11B - RF/mmW/5G​
Grand Ballroom Salon A

Tarek DAHER
​​Alexis DIVAY
Jasmina ANTONIJEVIC
Xavier FEDERSPIEL
David ROY
Blandine DURIEZ
Xavier GARROS​

​RF Aging Extensive Characterization & Modeling For Reliability-Aware Power Amplifier Design​​

Thursday, 26 March 2026
​3:25-3:50 PM
​11B - RF/mmW/5G
Grand Ballroom Salon A

Lucas NYSSENS
Ismaël CHARLET
Andrea LASSENBERGER
Ahmed MACHMACH
Arij BARBOURA
Fanny MORISOT
Yveline GOBIL
Erwan MORVAN
Alexis DIVAY​​

​Thermal Robustness of a CMOS-compatible GaN-on-Si MIS-HEMT Technology​​

3D Sequential Integration & Low Temperature Technologies

Tuesday, 24 March 2026
11:20-11:45 AM
2A.3
Grand Ballroom Salon BC

Ahmed MACHMACH​
Christoforos THEODOROU​
Francis BALESTRA​
Sébastien PLACE​
Owen GAUTHIER​
Sylvain JOBLOT​
Fabienne PONTHENIER​
Joris LACORD​

Ground-Plane Effect on Random Telegraph Noise in Mesa-Isolated SOI MOSFETs for 3D Sequential CISi
​ ​

Tuesday, 24 March 2026
2:00-2:25 PM
3C.2 ​
Grand Ballroom Salon BC

Antoine ALBOUY​
Abygaël VIEY​
Fabienne PONTHENIER​
Sylvain JOBLOT​
Dominique GOLANSKI​
Joris LACORD​

Dit-Nt Correlation in pBTI Stressed SOI nMOSFET via Low Frequency Noise​
​ ​

​Tuesday, 24 March 2026
3:40-4:05 PM​​
4C - Process Integration
Catalina Ballroom

William VANDENDAELE
Daphnée BOSCH
Mickael RIBOTTA
Tadeu MOTA FRUTUOSO
Remy GASSILLOUD
Abygaël VIEY
Xavier GARROS
Perrine BATUDE

Reaching the BTI 10yrs Lifetime for 2.5V BEOL Compatible (<420°C) Hig​h Voltage Si-CMOS

Tuesday, 24 March 2026
4:30-4:55 PM
4C - Process Integration
Catalina Ballroom

Abygaël VIEY
Charles GRESSET
Xavier GARROS
Xavier FEDERSPIEL
Alexis KRAKOVINSKY
Fabienne PONTHENIER
Raphael FILLON
Dominique GOLANSKI
Joris LACORD​

Influence of Channel Doping on HCI Degradation in Analog SOI nMOSFETs​

Thursday, 26 March 2026
2:00-2:25 PM​
11A - Metallization/BEOL Reliability
Grand Ballroom Salon BC

Robert BLOOM​
Armen KTEYAN​
Stéphane MOREAU​
Valeriy SUKHAREV​
​Chris KIM​
Siemens EDA​

Improving Electromigration Lifetime Through Power Grid Segmentation: An Experimental Study
​ ​ ​

[FD-SOI]

Tuesday, 24 March 2026
​4:05-4:30 PM
PM​4C - Process Integration
Catalina Ballroom

Elhadji Alhousseyni DIALLO​
Tadeu MOTA FRUTUOSO
William VANDENDAELE
Laurent BREVARD
Claire FENOUILLET-BERANGER
Marie-Claire CYRILLE
Xavier GARROS​

Modeling the Impact of HK thickness scaling (down to 1.1nm) On Gate Leakage and PBTI in advanced FDSOI devices

Wednesday, 25 March 2026
2:00-2:25 PM
7A - Transistors
Grand Ballroom Salon BC​

Tadeu MOTA FRUTUOSO​​
William VANDENDAELE​​
Jerome MAYOLET​​
Blend MOHAMAD​​
Joel KANYANDEKWE​​
Lucie LARAIGNOU​​
Melanie DARTOIS​​
Fabien BRINGUIER​​
Valerie LAPRAS​​
Vincent JOUSSEAUME​​
Chloe GUERIN​​
Antoine RAISON​​
Krunoslav ROMANJEK​​
Zdenek CHALUPA​​
Marie-Claire CYRILLE​​
Claire FENOUILLET-BERANGER​​
Blandine DURIEZ​​
Xavier GARROS​​

Spacer trapping effect on hot carriers’ degradation dynamics for advanced FDSOI nodes​


 

ABOUT IRPS​

For over 60 years, IRPS has been the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all other parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic systems through an improved understanding of both the physics of failure as well as the application environment.

IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.


DL_Icon.pngMore information on ​​IRPS Website

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Practical information


22 - 26 March 2026 | Tucson, Arizona, USA

Website​​​

 ContactsStéphane MOREAU​ with any questions.​​


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CEA-Leti contacts

Stéphane MOREAU​

Research-Engineer / Reliability / 3D integration ​


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