CEA-Leti's participation in the SISPAD 2023 is a great success!
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We are presenting 7 articles which positions Leti as one of the main contributors to this conference, which remains the reference conference in the field of process and device simulation.
The International Conference on Simulation of Semiconductor Processes and
Devices (SISPAD) provides an international forum for the presentation of
leading-edge research and development results in the field of process and
device simulation. SISPAD is one of the longest-running conferences devoted to
technology computer-aided design (TCAD) and advanced modeling of novel
semiconductor devices and nano-electronic structures.
About CEA-Leti scientific presentations @SISPAD 2023
[Session 3] Advanced CMOS Devices
SOI pMOS Drain Leakage Understanding Based on TCAD and Measurements, Daphnée Bosch et al.
Doped Channel SOI pMOS TCAD Description Including Floating Body Effects, Joris Lacord et al.
[Session 6] Compact Modeling
FDSOI MOSFET Subthreshold Slope Model Accuracy Improvement Introducing Low-Field Quantum Mechanical Correction, Thomas Bédécarrats et al.
- Thu. Sep 28, 2023 10:50 AM - 11:10 AM Hall B
Body Resistance Model For Partially Depleted SOI Device: Charge-Based Approach, Extraction and Verilog-A Implementation, Sébastien Martinie et al.
[Session 10] Memories
A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge2Sb2Te5 Alloys,
Robin Miquel et al.
- Fri. Sep 29, 2023 10:50 AM - 11:10 AM Hall B
Advanced TCAD Modeling of HfO2-based ReRAM:Coupling Redox Reactions and Thermal Effects,
Youssef Hirchaou et al.
[Session 11] Quantum Computing and Spintronics
- Fri. Sep 29, 2023 1:20 PM - 1:40 PM Hall A
Improving the tight-binding description of spin-orbit interaction in Si/Ge heterostructure for qubits applications
Gaëtan Veste1 et al.
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