EVENT
CEA-Leti will highlight its most recent research advances in 2D materials, RF-SOI, 3D sequential, memory and LIDAR at December IEDM.
DISCOVER CEA-LETI’S MAJOR SCIENTIFIC RESULTS AT IEDM 2025
Tuesday, December 9
2:45 PM - 3:10 PM PST
Grand Ballroom B
By Sylvain Barraud
"Novel Channel-last Integration of ALD MoS2 Into Stacked Channel FETs on 300mm Wafers"
Tuesday, December 9
9:55 AM- 10:20 AM PST
Continental 6
By Thibaud Fache
"Unlocking High-Performance Si RF Platforms with SiGe HBT and RFSOI Switch Technologies"
Tuesday, December 9
5:40 PM - 6:05 PM PST
Continental 6
By Abygaël Viey
"Unified Time-Frequency Polarization Modeling in High-Density 3D MIM Capacitor Arrays"
Wednesday, December 10
10:20 AM - 10:45 AM PST
Continental 6
By Daphnée Bosch
"High Performance 2.5V N&P 400°C SOI MOSFETs: A Breakthrough for Versatile 3D Sequential Integration"
Monday, December 8
2:25 PM - 2:50 PM PST
Grand Ballroom B
By Matteo Baldo
"A Novel A-IMC Ge-GST ePCM Cell for Edge AI Applications on 28nm FD-SOI Platform"
Wednesday, December 10
10:20 AM - 10:45 AM PST
Continental 6
By Laurent Fey
3D FMCW Wide-angle Flash Lidar: Towards System Integration and In-pixel Frequency Measurement
ABOUT IEDM
IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.