EVENT
International Conference on Simulation of Semiconductor Processes and Devices
The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures. SISPAD 2025 will be held in-person in Grenoble, France, from September 24 to 26, 2025. A satellite workshop will be offered on the day before the main conference starts (September 23).
DON'T MISS ELISA VIANELLO'S TALK ON RESISTIVE MEMORIES
Plenary Session
September 25th, 08:45 p.m.
Resistive memories: multifaced impact on neuromorphic computing
Elisa Vianello
Senior Scientist, CEA-Leti
DISCOVER CEA-LETI’S MAJOR SCIENTIFIC RESULTS
With 3 papers, the institute will present this year’s major scientific results at SISPAD 2025, including the following topics:
- Anisotropic electron polaron mobility in V2O5: from ab initio to Kinetic Monte Carlo
- Multi-scale simulation framework for the modelling of charge capture and emission in spin qubit devices
- Phase-Field Simulations for RF Switches: Highlighting the Benefits of GeTe over GST
Two scientific papers and a poster
Full-band BTE and hopping transport
Hala Houmsi, Benoit Sklénard, François Triozon, Marc Guillaumont, Jing Li
Anisotropic electron polaron mobility in V2O5: from ab initio to Kinetic Monte Carlo
Quantum computing
Gabriele Boschetto, Chritoph Wilhelmer, Lukas Cvitkovich, Jing Li, Dominic Waldhoer, Tibor Grasser, Biel Martinez i Diaz
Multi-scale simulation framework for the modelling of charge capture and emission in spin qubit devices
Poster
Corentin Mercier, Olga Cueto, Bruno Reig, Jean-François Robillard, Stéphane Monfray, Emmanuel Dubois, Alain Fleury
Phase-Field Simulations for RF Switches: Highlighting the Benefits of GeTe over GST
Don’t miss the
FAMES Pilot Line booth, to explore real collaboration opportunities with top European research and industrial partners, and discuss how its state-of-the-art infrastructure can accelerate your innovation.
ABOUT SISPAD 2025
SISPAD constitute the annual International conference on Simulation around semiconductor for Microelectronics research. Around 150 participants are expected from all around the world (industry and academia). SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano-electronic structures. The conference is held annually in September and the location alternates between the United States, Japan, and Europe.
More information on SISPAD's website