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The surge in nanoelectronics and photonics has resulted from a need for miniaturized tools and devices that are an integral part of our lives. Additionally, it has now become necessary to consider innovation through issues involving planetary resources and energy consumption. Because it is installed in miniaturized devices, silicon-based CMOS technology is now central to these issues. This presents significant challenges for reaching a low energy consumption that aligns with current societal preoccupations.
Congratulations to Jean-Michel Hartmann who received the Electronics and Photonics Division award at the 243rd electrochemical society conference, Boston, May 2023!
The prize was an opportunity to celebrate our long partnership with the Forschungszentrum Jülich research center, which has produced more than a hundred joint publications since 2009. The Electronics and Photonics Division award was created in 1969 to encourage excellence in electronics research and a remarkable technical contribution in the field of electronic science.
Jean-Michel Hartmann received his PhD in Physics from Grenoble Alpes University in 1997. At the time, his research focused on solid source molecular beam epitaxy of CdTe/MnTe and CdTe/MgTe heterostructures for optical purposes. As an Imperial College postdoctoral researcher from 1997 to 1999, he studied gas source molecular beam epitaxy of Si/SiGe heterostructures for modulation-doped field-effect transistors (MODFET). Mr. Hartmann began working at CEA-Leti in 1999 as a research engineer. In 2007, he was named senior CEA expert, and Director of CEA Research in 2016.
Alongside his colleagues, Jean-Michel explored an alternative to the physical limitations of miniaturized CMOS technology by replacing Si (Silicon) by GeSn (Germanium-Tin). Thanks to the breakthrough, vertical germanium-tin transistors are strong candidates for future low-power, high-performance chips, or even quantum computers. This research led to publication in Nature magazine.
“In addition to unprecedented electro-optical properties, GeSn binaries have the major advantage of being able to be deposited into the same epitaxy reactors as Si and SiGe alloys, making it possible to create a platform for group IV optoelectronic semiconductors that can be monolithically integrated on Si" claims Jean-Michel Hartmann.
“The CEA-Leti ecosystem is unique; the resources and people we meet here all share the same curiosity to find the best possible epitaxy processes.
Nature paper: click here
Acknowledgements: engineers from nanolectronics and photonics platforms, Dan Buca, Detlev Grützmacher, Qing-Tai Zhao, Lazar Saidi, Tanguy Marion, Frederic Gonzatti, Joel Kanyandekwe, Justine Lespiaux, Benjamin Assie, Philippe Roche, Thierry Braizaz, Jérémie Bisserier and Marvin Frauenrath
CEA is a French government-funded technological research organisation in four main areas: low-carbon energies, defense and security, information technologies and health technologies. A prominent player in the European Research Area, it is involved in setting up collaborative projects with many partners around the world.