You are here : Home > SOI technology for quantum information processing

Publications

SOI technology for quantum information processing

Published on 29 March 2018
SOI technology for quantum information processing
Description
 
Date 
Authors
De Franceschi S., Hutin L., Maurand R., Bourdet L., Bohuslavskyi H., Corna A., Kotekar-Patil D., Barraud S., Jehl X., Niquet Y.-M., Sanquer M., Vinet M.
Year2017-0126
Source-TitleTechnical Digest - International Electron Devices Meeting, IEDM
Affiliations
CEA, INAC, Grenoble, France, CEA, LETI, Minatec Campus, Grenoble, France, University Grenoble Alpes, Grenoble, France
Abstract
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology. © 2016 IEEE.
Author-Keywords
 
Index-Keywords
Degrees of freedom (mechanics), Electron devices, Field effect transistors, Quantum optics, Fully depleted silicon-on-insulator, Microwave excitations, Of quantum-information, Quantum processors, Quantum-information processing, Recent progress, Silicon nanowire field-effect transistors, SOI technology, Silicon on insulator technology
ISSN1631918
LinkLink

Go back to list