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SOI technology for quantum information processing

Published on 29 March 2018
SOI technology for quantum information processing
De Franceschi S., Hutin L., Maurand R., Bourdet L., Bohuslavskyi H., Corna A., Kotekar-Patil D., Barraud S., Jehl X., Niquet Y.-M., Sanquer M., Vinet M.
Source-TitleTechnical Digest - International Electron Devices Meeting, IEDM
CEA, INAC, Grenoble, France, CEA, LETI, Minatec Campus, Grenoble, France, University Grenoble Alpes, Grenoble, France
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology. © 2016 IEEE.
Degrees of freedom (mechanics), Electron devices, Field effect transistors, Quantum optics, Fully depleted silicon-on-insulator, Microwave excitations, Of quantum-information, Quantum processors, Quantum-information processing, Recent progress, Silicon nanowire field-effect transistors, SOI technology, Silicon on insulator technology

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