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GeSn lasers for CMOS integration

Published on 29 March 2018
GeSn lasers for CMOS integration
Buca D., Von Den Driesch N., Stange D., Wirths S., Geiger R., Braucks C.S., Mantl S., Hartmann J.M., Ikonic Z., Witzens J., Sigg H., Grutzmacher D.
Source-TitleTechnical Digest - International Electron Devices Meeting, IEDM
Peter Grünberg Institute 9, Forschungszentrum Jülich GmbH, Jülich, Germany, Laboratory for Micro- and Nanotechnology (LMN), Paul Scherrer Institute, Villigen, Switzerland, CEA, LETI, MINATEC Campus, Université Grenoble Alpes, F-38054, Grenoble, France, Institute of Microwaves and Photonics, University of Leeds, Leeds, United Kingdom, Institute of Integrated Photonics, RWTH Aachen, Aachen, Germany
In search of a suitable CMOS compatible light source many routes and materials are under investigation. Si-based group IV (Si)GeSn alloys offer a tunable bandgap from indirect to direct, making them ideal candidates for on-chip photonics and nano-electronics. An overview of recent achievements in material growth and device developments will be given. Optically pumped waveguide and microdisk structures with different strain and various Sn concentrations provide direct evidence of gain in these alloys and the width of the emission wavelength range that can be covered. Towards the aim of electrically pumped lasers, a set of different homojunction light emitting diodes and more complex heterostructure SiGeSn/GeSn LEDs is presented. Detailed investigation of electroluminescence spectra indicate that GeSn/SiGeSn heterostructures will be advantageous for future laser fabrication. © 2016 IEEE.
CMOS integrated circuits, Electron devices, Heterojunctions, Light, Light sources, Nanoelectronics, Pumping (laser), Silicon alloys, Electrically pumped lasers, Electroluminescence spectra, Emission wavelength, Laser fabrication, Microdisk structures, On-chip photonics, Sn concentration, Tunable Band-gap, Light emitting diodes

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