Next generation hybrid bonding
An enabling technology for new architectures
For more than 10 years, CEA-Leti has participated in the public-private French Nanoelec ecosystem, which represents 22 core partners. To deliver advanced packaging and die-to-wafer hybrid bonding, CEA-Leti partners with equipment manufacturers (SET, EVG, etc.) and adapts specific die-to-wafer processes from pick and place technology to self-assembly for improved throughput and alignment accuracy.
Tech highlights:
- Mastery of surface cleanliness and control of nanotopography
- Die size: 1 × 1 mm² to 10 × 10 mm²
- Inter-die spacing: down to 40 μm inter-die spacing
- Interconnection pitches: from 10 μm to less than 5 μm
- Electrical yield: more than 90% electrical yield
What's new?
CEA-Leti offers 3D integration with improved functions and performance thanks to several technical advances:
- Various circuits (top-die & bottom-die) can now be hybrid bonded to improve interconnection and reduce pitches
- Top-die circuits can be joined to a substrate using TSVs to connect signals and the power supply
- Heterogeneous bonding techniques enable the combination of various new substrates
CEA-Leti is also working on new integration technologies such as self-assembly. This advance enables higher alignment performance (+/- 200 nm) and increased throughput (thousands dies/h).
How do we work together?
CEA-Leti’s advanced platforms enable partners to: - Develop process modules that are too disruptive for existing fabs
- Facilitate mass manufacturing for specific designs that are optimized at the research level but not yet compatible with large-scale operations
- Co-create new functions for a given application
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What’s next?
- Reduced pitch interconnection
- Reduced temperature
- Multi-stack die-to-wafer processes
- Industrial transfer
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CEA-Leti's Hybrid Bonding video
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