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Integration of 2D materials in VLSI electronic devices

2D materials is a new class of atomic layer nanoscale materials that opens new perspectives for high performance sensors, CMOS, memories and photonics

Published on 24 July 2020
  • ​CEA-Leti has launched an ambitious program to prepare and ramp up integration of 2D materials in VLSI electronic devices. This program is built on a two-fold strategy: integrate 2D materials layers in VLSI 200mm and 300mm fabrication processes and rely on solid fabrication and characterization know-how to propose innovative devices using 2D materials that introduce devices with new functions and/or better performance.

  • As part of this strategy, a novel fabrication protocol was developed and patented in 2018 that allows integration of vertically freestanding 2D-materials layers in electronic components. In contrast to the horizontal integration process commonly used for 2D materials, vertical integration increases component density per surface unit and maintains 2D materials' exceptional properties.

CEA-Leti's 2D-materials experts collaborated with Prof. Zheng Han from Shanxi University (previously affiliated with the Institute of Metal Research, Chinese Academy of Sciences). Prof. Zheng Han previously was a research associate at CEA-Leti under the supervision of Thomas Alava. Their collaboration gave rise to the initial idea for graphene materials. The concept of vertically standing 2D films was then extended to MoS2. The teams from CEA-Leti and Chinese collaborators worked with joint forces for more than two years, and brilliantly demonstrated a FinFET with the world's thinnest fin, which approaches the limit of one single atomic MoS2 layer. Arrays of such fins with a 50 nm pitch are also demonstrated at the laboratory scale. 

2D materials hold great promises for the implantation of future nanoelectronics.  CEA-Leti, along with global collaborators, continue to push further.

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