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Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry

Published on 29 March 2018
Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry
Description
 
Date 
Authors
Crippa A., Maurand R., Kotekar-Patil D., Corna A., Bohuslavskyi H., Orlov A.O., Fay P., Laviéville R., Barraud S., Vinet M., Sanquer M., De Franceschi S., Jehl X.
Year2017-0157
Source-TitleNano Letters
Affiliations
Université Grenoble Alpes, CEA INAC-PHELIQS, Grenoble, France, Dipartimento di Scienza Dei Materiali, Università di Milano Bicocca, Via Cozzi 53, Milan, Italy, CNR-IMM, Via C. Olivetti 2, Agrate Brianza (MB), Italy, CEA, LETI MINATEC Campus, Grenoble, France, Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, United States
Abstract
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive responses, we obtain the complete charge stability diagram of the device. Electron transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states, thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of electron transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot. © 2017 American Chemical Society.
Author-Keywords
charge relaxation, Dispersive readout, double quantum dot, high-frequency resonator, reflectometry, silicon
Index-Keywords
Electron transitions, Electron transport properties, Metals, MOS devices, Nanocrystals, Oxide semiconductors, Phase shift, Quantum chemistry, Quantum theory, Radio waves, Reflection, Reflectometers, Resonators, Semiconducting silicon, Silicon, Temperature, Charge relaxation, Dispersive readout, Double quantum dots, High frequency resonators, Reflectometry, Semiconductor quantum dots
ISSN15306984
LinkLink

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