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Electronic Transport on W-Rich Films Deposited by Focused Ion Beam

Published on 29 March 2018
Electronic Transport on W-Rich Films Deposited by Focused Ion Beam
Description
 
Date 
Authors
Mongillo M., Jansen L., Audoit G., Berthier R., Cooper D.
Year2017-0380
Source-TitleJournal of Superconductivity and Novel Magnetism
Affiliations
University Grenoble Alpes, Grenoble, France, CEA, LETI-SCMC, Grenoble, France, CEA INAC-PHELIQS, Grenoble, France, IMEC, Kapeldreef 75, Leuven, Belgium
Abstract
The electrical transport properties of W films obtained through focused ion beam deposition reveal a transition from weakly insulating to metallic behavior for increasing film thickness. At low temperatures, all the films make a transition to the superconducting state. The observed stochastic distribution of the critical superconducting current is related to the occurrence of phase slip processes as documented by the statistical distribution of the depairing current and its temperature dependence according to the thermally activated model of the superconducting phase in a tilted washboard potential. © 2017, Springer Science+Business Media New York.
Author-Keywords
Disordered superconductors, Focused ion beam, Thermally activated superconducting phase slips
Index-Keywords
Focused ion beams, Ion beam assisted deposition, Ions, Stochastic models, Stochastic systems, Superconducting films, Superconducting materials, Temperature distribution, Disordered superconductors, Electrical transport properties, Statistical distribution, Stochastic distribution, Superconducting current, Superconducting phase, Superconducting state, Temperature dependence, Ion beams
ISSN15571939
LinkLink

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