Statistical low-frequency noise characterization in sub-15 nm Si/SiGe nanowire Trigate pMOSFETs
| Description | |
| Date | |
| Authors | Theodorou C.G., Lavieville R., Karatsori T.A., Barraud S., Dimitriadis C.A., Ghibaudo G. |
| Year | 2017-0288 |
| Source-Title | IEEE International Conference on Microelectronic Test Structures |
| Affiliations | IMEP-LAHC, Univ. Grenoble Alpes, Minatec, France, Department of Physics, Aristotle University of Thessaloniki, Greece, CEA-LETI, Univ. Grenoble Alpes, Minatec, France |
| Abstract | A detailed statistical characterization of the drain current low-frequency noise (LFN) in sub-15 nm Si/SiGe Trigate NW pMOSFETs is presented. The slow oxide trap density and distribution, as well as the correlated mobility fluctuations effect are probed for several channel geometries. The LFN variability scaling is also presented and compared to established nano-scale planar CMOS technologies. Our results indicate that such devices demonstrate relatively good gate oxide interface quality and LFN variability levels, despite their very aggressive dimensions and not yet optimized fabrication process. © 2017 IEEE. |
| Author-Keywords | |
| Index-Keywords | Drain current, Gate dielectrics, Microelectronics, MOSFET devices, Silicon alloys, Channel geometry, CMOS technology, Correlated mobility fluctuations, Fabrication process, Gate-oxide interface, Low-Frequency Noise, Oxide trap density, Statistical characterization, Si-Ge alloys |
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| Link | Link |