You are here : Home > Series resistance in different operation regime of junctionless transistors

Publications

Series resistance in different operation regime of junctionless transistors

Published on 1 October 2018
Series resistance in different operation regime of junctionless transistors
Description
 
Date 
Authors
Jeon D.-Y., Park S.J., Mouis M., Barraud S., Kim G.-T., Ghibaudo G.
Year2018-0055
Source-TitleSolid-State Electronics
Affiliations
Institute of Advanced Composite MaterialsKorea Institute of Science and Technology, Joellabuk-do, South Korea, School of Electrical EngineeringKorea University, Seoul, South Korea, IMEP-LAHC, Grenoble INP, Minatec, BP 257, Grenoble, France, CEA-LETI Minatec, 17 rue des Martyrs, Grenoble, France
Abstract
Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel. © 2018 Elsevier Ltd
Author-Keywords
Accumulation channel, Bulk channel, Junctionless transistors (JLTs), Numerical simulation and temperature dependence, Series resistance (Rsd)
Index-Keywords
Electric resistance, Numerical models, Temperature distribution, Accumulation channels, Bulk channel, Junctionless transistors, Series resistances, Temperature dependence, Transistors
ISSN381101
LinkLink

Go back to list