Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, Exagan, Minatec Entreprises BHT, 7 Parvis Louis Néel, Grenoble, France

It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 µm/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of µm observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 µm for the highest growth rates up to 100 µm for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 µm/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures. © 2017 Elsevier B.V.

A1 Characterization, A3 Metalorganic vapor phase epitaxy, B1 Nitrides, B3 High electron mobility transistors

Carbon, Carbon films, Cost reduction, Diffusion, Electron mobility, Epitaxial growth, Field effect transistors, Gallium compounds, Gallium nitride, Growth rate, Metallorganic vapor phase epitaxy, Organometallics, Semiconducting aluminum compounds, Single crystals, Surface diffusion, Vapor phase epitaxy, Carbon incorporation, Device fabrications, Dislocation densities, GaN-based structures, High electron mobility transistor (HEMT), Metal-organic vapor phase epitaxy, Random walk modeling, Threading dislocation densities, High electron mobility transistors