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Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction

Published on 1 October 2018
Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction
Description
 
Date 
Authors
Mohamad B., Leroux C., Reimbold G., Ghibaudo G.
Year2018-0007
Source-TitleSolid-State Electronics
Affiliations
Univ. Grenoble Alpes, Grenoble, France, CEA, LETI, MINATEC Campus, Grenoble, France, IMEP-LAHC, MINATEC/INPG, CS 50257, Grenoble, France
Abstract
For advanced gate stacks, effective work function (WFeff) and equivalent oxide thickness (EOT) are fundamental parameters for technology optimization. On FDSOI transistors, and contrary to the bulk technologies, while EOT can still be extracted at strong inversion from the typical gate-to-channel capacitance (Cgc), it is no longer the case for WFeff due to the disappearance of an observable flat band condition on capacitance characteristics. In this work, a new experimental method, the Cbg(VBG) characteristic, is proposed in order to extract the well flat band condition (VFB, W). This characteristic enables an accurate and direct evaluation of WFeff. Moreover, using the previous extraction of the gate oxide (tfox), and buried oxide (tbox) from typical capacitance characteristics (Cgc and Cbc), it allows the extraction of the channel thickness (tch). Furthermore, the measurement of the well flat band condition on Cbg(VBG) characteristics for two different Si and SiGe channel also proves the existence of a dipole at the SiGe/SiO2 interface. © 2017 Elsevier Ltd
Author-Keywords
 
Index-Keywords
Capacitance, Extraction, Parameter extraction, Thin film circuits, Vanadium alloys, Bulk technologies, Capacitance characteristics, Channel thickness, Direct evaluations, Effective work function, Equivalent oxide thickness, New experimental method, Technology optimization, Si-Ge alloys
ISSN381101
LinkLink

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