May 20, 2026 10:00
Session 1
Victor Sabiá Pereira Carpes
Cryogenic RF Characterisation of Passive Components for VCO and PLL Design in P28 FD-SOI for Quantum Computing Applications
May 20, 2026 11:30
Session 2
Maxime Sauvagnac
BOX CREEP: A Mechanical Booster for Next-Generation FDSOI
May 20, 2026 11:50
Session 2
Quentin Guillet
Strain engineering of thin monocrystalline Si films on 8-inch wafers using Surface Activated Hot Bonding
May 20, 2026 12:10
Session 2
Alexandre Vernhet
Impact of source/drain dopant implantation and spikeannealing on electrical parameters of 25 nm FDSOI n-MOSFETs
May 20, 2026 15:10
Session 3
Sylvain Beaurepaire
Mandrel material selection as prerequisite for SADP implementation at the 10 nm FD-SOI node
May 21, 2026 10:00
Session 5
Rihab Chouk
In-depth TCAD study of stacked MoS₂ channel FETs based on a channel-last integration
May 21, 2026 12:30
Session 6
Fatima Zahrae Tijent
Understanding room-temperature electrical characterizations of FDSOI spin qubit devices via TCAD simulations
May 21, 2026 15:10
Session 7
Yinyin Zhang Fu
Reduced metal gate height and in-situ doped faceted raised source and drain regions for advanced RF FD-SOI devices
May 21, 2026 16:10
Session 7
Emmanuel Petitprez
Contact Punch-Through Failure Mitigation in Advanced FD-SOI Nodes
May 21, 2026 12:15
Session 9
Yusra Rachidi
Split MLP Architectures for Accurate Joint Modeling of drain and gate currents in FD-SOI Transistors
POSTER
P 7
Antoine Faurie
A Scalable Time-Multiplexed Biasing Architecture for FDSOI Spin Qubits