Sumitomo (SHI) Material Solutions Europe (SMS-E), formerly known as Laser Systems & Solutions of Europe or LASSE,is the European subsidiary of Sumitomo (SHI) Material Solutions, a global supplier of semiconductor manufacturing equipment within the Sumitomo Heavy Industries (SHI) Group.
SMS-E provides laser-based systems used, for example, to manufacture power components on silicon (Si) or silicon carbide (SiC) wafers.
Nanosecond Laser Annealing and Sequential 3D Integration
Among the equipment produced and marketed by the company is a nanosecond laser annealing equipment (LT-3100). A particularly useful tool for sequential 3D integration, a technique that involves stacking multiple layers of transistors on top of each other.
"Laser annealing is comparable to the action of a blowtorch in cooking, when making a crème brûlée," illustrates Sébastien Kerdilès, head of thermal treatments at CEA-Leti."In this case, the goal is to heat the sugar present on the surface, without overheating the cream. Here, the principle is the same: we want to provide enough energy to manufacture the components of the upper layers, but without degrading those of the lower level, which do not support high temperatures. Nanosecond laser annealing precisely offers this possibility, by sending very short laser pulses, of 160 ns, in order to deposit energy on the surface, while maintaining a suitable temperature below, ideally below 400 °C."
This is the process that is the subject of the collaboration between SMS-E and CEA-Leti. After initial exchanges as early as 2014, the partnership was formalized in 2017 through the signing of a Joint Development Program (JDP).
"This agreement allowed us to establish our collaboration over the long term, around challenges jointly selected," appreciates Sébastien Kerdilès. "It has led us to explore fundamental subjects for several years, for example through PhD thesis. Moreover, it gives us access to a nanosecond laser annealing equipment from SMS-E, which is installed within CEA-Leti state-of-the-art cleanroom, and shared between our R&D work and demonstrations works for the company's partners."
Dopant Activation in Silicon by Nanosecond Laser Annealing
Recently, the joint research team has focused on two applications of this process, starting with silicon doping.
"The method consists of introducing a dopant element, such as boron or phosphorus, into certain areas of silicon, previously made amorphous – which means, without an ordered microstructure in the form of a crystalline network," explains Mathieu Opprecht, laser annealing researcher at CEA-Leti. "Then, it is a matter of applying nanosecond laser pulses to these areas, which has the effect of recrystallizing them, but also of activating the dopants, improving the performance of the transistors."
A technique that results in high dopant concentrations without damaging the lower components.
Furthermore, nanosecond laser annealing can be used in another way, in the liquid phase.
"It is possible to apply more powerful laser pulses, which causes local melting of the silicon," indicates Mathieu Opprecht. "This regime is implemented, for example, for the annealing of the transistors' gate at the upper level, in sequential 3D integration. However, the operation also leads to the appearance of side effects, including a certain roughness at the level of the molten layer. We then conducted studies to better understand these phenomena, particularly around the melting threshold, and thus master the process used."
These results were presented at three conferences held in September 2026: IIT*, in Villach (Austria), IWJT*, in Grenoble (France), and GADEST*, in Venice (Italy).
"The results presented at these conferences are truly remarkable" says Sébastien Dauvé, CEO of CEA-Leti. "They illustrate the interest of a long-term collaboration between CEA-Leti and an equipment manufacturer such as SMS-E. By working together within the CEA-Leti clean room infrastructures, we are able to demonstrate the performance and interest of an equipment developed and produced in Europe, thus strengthening the European semiconductor value chain."
“Our long-standing collaboration with CEA-Leti is a key part of our strategy to strengthen SMS-E's presence and technological capabilities in Europe" says Masashi Tsuchiya, President of SMS-E. “By combining CEA-Leti's world-class semiconductor research environment with SMS-E's expertise in advanced laser annealing technologies, we aim to accelerate innovation and bring new solutions closer to industrial applications. Our main site in Gennevilliers has a central role in this ambition as our European hub for development, manufacturing and sales and we are committed to continuing to invest in Europe and contribute to a stronger and more innovative European semiconductor ecosystem."
Now, the work continues, notably through PhD theses, in order to further optimize performance and facilitate the transition toward industrial applications. The collaboration between SMS-E and CEA-Leti is set to continue, as the two partners renewed their JDP last November for an additional three-year period. New application paths for nanosecond laser annealing will be explored in particular.
The relationship between SMS-E and CEA-Leti will also enter a new phase with the upcoming installation of the QA-3000, SMS-E's latest laser annealing platform operating in the microsecond regime. Developed as a scalable technology platform, the QA-3000 is designed to address a wide spectrum of semiconductor applications, ranging from power devices to next-generation memory and advanced logic. Its capabilities extend from sub-melt processing to melt regimes, opening new possibilities for advanced material engineering. By enabling enhanced control of the thermal gradient, the technology also aims to broaden the process window and facilitate the integration of laser annealing into increasingly complex advanced semiconductor manufacturing processes.